| 摘要 |
<p>A bit erasable EEPROM is constructed which alleviates the problems of early termination of erasure and over-erasure. Rather than erasing the entire array at once, and thereby causing the problem of early termination of erasure and over-erasure, each cell is erased individually. In another embodiment of this invention, a group of one or more cells on a word line are erased at once with self-termination of the erase operation of each cell occurring when that cell's transistor becomes conductive, and at that time the erasure of only that cell ceases. The erasure of a particular cell ceases without effecting the erasure of operation of other cells. Therefore, the electrical erasure is self-limiting for each individual cell. In another embodiment of this invention, a group of one or more cells on a bit line are erased at once with no danger of under or over-erasure of each particular cell.</p> |
