| 摘要 |
PURPOSE:To improve the controllability of an impurity distribution significantly by a method wherein in a prescribed domain of a single-crystal semiconductor substrate an element ion which is the same as that of the substrate or a neutral element ion is implanted and that domain is turned into an amorphous domain and a prescribed conductive ion is implanted and then photo-annealing process is applied. CONSTITUTION:An ion of Si element or neutral element is implanted in a prescribed domain of a P type Si substrate 20 and an amorphous layer 22 is formed and after a V family atom such as P is implanted by ion implantation, photo- annealing process including infrared rays or the like is applied to the whole substrate 20 and an N type domain 21 is formed in the layer 22. At the same time, an ionized doner is activated and the crystal of the layer 22 is recovered. With this constitution, re-distribution of an impurity distribution by an exponential tail due to channeling effect is eliminated so that this method is made suitable for manufacturing a semiconductor device with a very shallow P-N junction. |
