| 摘要 |
PURPOSE:To enalrge the electrode area of a semiconductor memory without enlarging the plane area by a method wherein the side wall part of a groove dug in an Si substrate is used as a plate, and an electrode buried in the groove thereof interposing an insulating film between them is used as the main part of a capacitor electrode. CONSTITUTION:After a field oxide film 11 is formed on a P type Si substrate 10, a groove 17 having the prescribed size is formed. After then, a P<+> type layer 8 the same conductive type with the Si substrate is formed on the side wall and the lower part of the groove to be used as a plate 8. After then, a capacitor insulating film 18 is coated, a capacitor electrode connecting hole 20 to reach the Si substrate 10 is formed at the prescribed part of the capacitor insulating film 18 thereof, and a poly-Si capacitor electrode 19 is adhered to the prescribed part as to be connected to the Si substrate 10 through the connecting hole 20 thereof. After then the poly-Si electrode 19 is oxidized to form a first interlayer insulating film 13, a gate oxide film 12 is formed at the part to be formed with a switching transistor 2, and moreover a gate is adhered thereon. After then As ions, etc., are implanted to form N<+> type diffusion layer 15. Moreover a second interlayer insulating film 14 is adhered, a contact hole 9 to the N<+> type diffusion layer 15 is formed, and a bit line 3 is adhered. |
