发明名称 OPTICAL VAPOR GROWTH METHOD
摘要 PURPOSE:To increase the growth rate of a film by previously exciting a sensitizer containing one part of a reactive gas or one part of the reactive gas and mercury by ultraviolet beams before it is introduced to a reaction furnace, mixing the sensitizer with another gas in the reaction furnace and irradiating ultraviolet beams again at a stage where a reaction is generated. CONSTITUTION:The reactive gas A is mixed with a gas C as the sensitizer first, and enters in a spare exciting chamber 101 made of quartz, and the reactive gas A and the sensitizer C are brought to an exciting state by light sources 102. The excited gas A and the sensitizer C are introduced into the reaction furnace 103 made of quartz, mixed with a reactive gas B, irradiated by light sources 107 on a substrate 106 placed on a susceptor 105, a temperature thereof is changed by infrared ray lamps 104, and excited again. The growth rate of the film to the substrate 106 is increased remarkably because the reactive gas A and the sensitizer C contain a large amount of excited active seeds at a stage where they are irradiated by the light sources 107 and the reactive gas B is also excited.
申请公布号 JPS5982720(A) 申请公布日期 1984.05.12
申请号 JP19820193206 申请日期 1982.11.02
申请人 NIPPON DENKI KK 发明人 HAMANO KUNIYUKI
分类号 H01L21/31;C23C16/48;H01L21/205;H01L21/263 主分类号 H01L21/31
代理机构 代理人
主权项
地址