| 摘要 |
PURPOSE:To provide the titled laser device with remarkably stable characteristics even at high optical output by a method wherein a thrid clad layer, a light guide layer and a fourth clad layer are provided around the end whereon laser beam is emitted while current is concentrated on a striped active region against the section perpendicular to the direction toward which the laser beam is advancing. CONSTITUTION:An N-Ga0.5Al0.5As clad layer 2, a P-Ga0.75Al0.25 As light guide layer 3, a P-Ga0.5Al0.5As clad layer 4, an N-GaAs layer 5 are successively formed on an N type GaAs substrate 1. Firstly a striped hole is formed down to the semiconductor substrate 1 and another N-Ga0.5As clad layer 6, an undope Ga0.86Al0.14As active layer 7, a P-Ga0.5As clad layer 8 and an N-GaAs cap layer 9 are successively formed. Secondly a Zn diffusion 10 is selectively formed on an N-GaAs cap layer 9 located on the upper part of a laser active region and a P-electrode 11, an N-electrode 12 are evaporated and then a laser chip is produced by means of cleaving and scribing. |
