| 摘要 |
PURPOSE:To execute a gas piping and the changeover of a gas easily and accurately by circularly fixing and arranging a plurality of small-sized chambers each encasing one wafer, partially covering the chambers with an arcuate heating furnace covering a plurality of the chambers, making the heating furnace travel on a circular and heating the chambers in succession. CONSTITUTION:Chamber groups (a), (a)... are supplied with the gas in response to the uniform motion of the heating furnace 12. A wafer exchanger 13 loads and unloads a series of wafers in opposition to the chamber a4 until the chamber a1 enters into the heating furnace 12 again after it leaves from the furnace. When the chamber a1 enters into the heating furnace 12, a temperature rise is started, the chamber is elevated up to a fixed temperature required after a fixed time passes, and a vapor etching gas is fed to clean the surface of the wafers 1 by the gas. The supply of said gas is changed over to that of a reactive gas and epitaxial growth operation is started, the chamber a1 advances close by the outlet of the heating furnace 12 when said operation is completed, H2 gas and N2 gas are fed from the outlet and the temperature of the chamber drops, and the chamber is discharged from the heating furnace 12. |
