| 摘要 |
PURPOSE:To contrive to enhance the withstand voltage and the switching property of a semiconductor device by a method wherein an emitter region is provided in a base region, and a poly-Si film and an emitter electrode are laminated thereon interposing an SiO2 film having a minute gap on the emitter region between the base region. CONSTITUTION:An SiO2 film 14 having a belt type gap 16 of concentrically circular type is provided on the surface of an N<+> type emitter 15 in a P type base 3, and a poly-Si film 17 added with phosphorus is put thereon containing the edge part of P-N junction 11. An Al electrode having nearly the equal area, the equal shape with the poly-Si film 17 on an SiO2 island 14' is evaporated, and is covered with a CVD SiO2 film 20. At this construction, when carriers are led to the gap 16 radially from the center 18' of the electrode 18 during switching action, carriers are dispersed uniformly according to the poly-Si stabilizing resistor 17'. Accordingly the switching property can be enhanced by thinning base width, current concentration is released, the emitter effective area can be enlarged sufficienty, and the safely active region can be magnified substantially. |
