| 摘要 |
PURPOSE:To prevent the damage of a substrate surface due to high energy particles by performing vapor chemical reaction during the irradiation with ultraviolet rays. CONSTITUTION:Thin films of an Si, a nitride, an oxide, a metal, etc. are formed by making ultraviolet ray energy perform the chemical reaction of a reactive gas. As the light, the ultraviolet ray from a mercury lamp, a laser, etc. is generally used. At the time of reaction, Hg atoms existent in the vapor phase become in an excited state by absorbing the ultraviolet ray, and the excited Hg decomposes the SiH4 gas, thus resulting in the formation of the Si film on the surface. |
