| 摘要 |
<p>PURPOSE:To prevent the increase of dark time voltage by dying a dye-acceptor layer by means of ammonium salt type dye. CONSTITUTION:An Al layer 4 and an Al pad electrode 5 are provided, at a fixed interval, on a substrate having a photo sensor part 2, and further a resist film 7 is applied and smoothed on a solid-state image pick-up element coated with an Si3N4 film 6. Next, the resist film 7 is exposed and developed, thus removing only the film on the part of the pad electrode 5, and further the first dye-acceptor layer 8 is formed by means of a resist. Then, a dying proof layer 9 is formed by dying the acceptor layer 8 using the acid solution of the ammonium salt type dye. Moreover, the second dye-acceptor layer 10 is formed and dyed, and then a protection film 11 is formed. Thus, the increase of the dark time voltage of the element produced by the impregnation of an alkaline metal from the front or back surface of a wafer of a CCD, etc. can be prevented.</p> |
