Process for epitaxial growth of multidoped semiconductive layers and layers thus obtained.

摘要

Process for epitaxial growth of a layer of semiconductive compound, such as the compounds III-V, II-VI, IV-VI and the like, doped with impurities resulting in the same type of conductivity, and the products obtained by this process. The invention is noteworthy in that the dopant impurities chosen are at least two different chemical species whose geometric effects on the edge of the crystal lattice of the said compound are opposite. A first species (or category of species) inducing an extension of the crystal lattice and the second species (or category of species) inducing a contraction of the lattice. Application: III-V photocathodes. <IMAGE>