| 摘要 |
PURPOSE:To facilitate the connection with an external circuit by etching away a part of a stripe electrode for voltage application after an optical waveguide is formed on a substrate, and then forming a bonding pad for the connection with the external circuit by a lift-off method. CONSTITUTION:A high-resistance Ga-As layer 23 is grown on a Ga-As substrate 24, etc., by a liquid phase epitaxial method. A metallic film of Al, etc., is vapor- deposited on the phase 23 and then two metallic stripes 21 and 22 are formed by photolithography. The phase 23 is etched by using those stripes 21 and 22 as protection films to form ridge type optical waveguides 31 and 32. Then, metallic parts at one-side end 33 and 34 of the stripes 21 and 24 are removed by photolithography. Then, electrodes 28 and 29 for bonding pads are formed by the lift- off method. Thus, the connection between a reverse-surface electrode 25 and electrodes 28 and 29 is made easily and securely and two close optical waveguides 31 and 32 are driven independently and easily. |
