| 摘要 |
PURPOSE:To form a compd. semiconductor in a high yield fir gaseous raw materials on a substrate by using an introducing pipe of a specific construction as a pipe for supplying gaseous raw materials within a vapor growth reaction tube. CONSTITUTION:A gas introducing pipe consisting of a quadruple pipe consisting of reactive gas introducing pipes 21-24 is used in the stage of growing InGaAs on an InP substrate 29 in a reaction tube 31. Cooling water is flowed in a flow passage 27 for a cooling medium of such gas introducing pipe, and after the inside of the tube 31 is substd. with gaseous H2, gaseous H2 contg. a trace of P(C2H5)3 is used for an introducing gas 32, gaseous H2 for an introducing gas 33 and gaseous H2 for an introducing gas 34. An InP substrate 29 is heated to 680 deg.C and the reaction region 35 of the reactive gas region to >=800 deg.C. The gas 32 is changed over to gaseous H2 contg. AsCl3, and the gas 33 to gas contg. In(C2H5)3 and Ga(C2H5)3. The gas 32 is again changed over to the gaseous H2 contg. P(C2H5)3 and the gas 33 to the gaseous H2 after 30min, and the tube 31 is cooled down to the room temp., whereby InGaAs is epitaxially grown on the substrate 29. |
