| 摘要 |
PURPOSE:To enable to reduce the gate sensitivity of the titled thyristor while it is being controlled by a method wherein a metal having a high potential such as gold, platinum, copper and the like is implanted in the region in the vicinity of the P2-N2 junction located between a gate electrode and a cathode electrode. CONSTITUTION:An N type substrate 1 of 30-40OMEGA/cm in specific resistance is thinned off to the thickness of 250mum or thereabout by performing a chemical polishing method. Then, layers P1 and P2 are provided by diffusing gallium from both sides. A silicon oxide film is provided by oxidizing a wafer at a high temperature, and after the part to be turned to a cathode region has been removed by performing an optical method, the region to be turned to a diffusion layer N2 is provided using phosphorus. An ion implantation is selectively performed in the region 8 located in the vicinity of junction P2-N2 using photoresist, and the gas obtained by evaporating an aqueous solution, and a sintering is performed. As a result, the low current characteristics of current amplification factor of transistors P1, N1 and P2 can be reduced, thereby enabling to reduce the gate sensitivity of the thyristor. |
