发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To reduce the manufacturing cost and to improve the memory function, by providing a mode execution circuit and setting selectively the mode to form the memory having plural read/write modes with the same mask pattern. CONSTITUTION:A cell array 1 where plural memory cells are arranged in matrix is provided, a desired data is read out sequentially from the array 1 based on an address signal applied externally so as to write data in the array 1. In this case, mode executing circuits 8-11 execute plural different read/write systems. A mode selecting set circuit 8 transmits a signal selecting and executing one of the read/write systems.
申请公布号 JPS5975494(A) 申请公布日期 1984.04.28
申请号 JP19820186023 申请日期 1982.10.25
申请人 HITACHI SEISAKUSHO KK 发明人 MATSUMOTO TETSUO;ISHIHARA MASAMICHI
分类号 G11C11/41;G11C7/00;G11C11/34;G11C11/401 主分类号 G11C11/41
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