| 摘要 |
PURPOSE:To simplify the method of manufacture and to improve the yield rate of production as well as to enable to utilize the titled transistor as a thin film integrated circuit by a method wherein a metal oxide obtained by oxidizing a gate electrode is used as a gate insulative film, and a channel layer to be turned to a thin film semiconductor is formed on said gate insulative film. CONSTITUTION:Tantalum, for example, is coated on an insulated substrate 10 as a gate electrode 11, a patterning is performed by etching, an anodic oxidization is performed, and a gate insulative film 12 is formed on the surface. Subsequently, an i-layer is formed by performing a glow discharge of silane on amorphous silicon, and an N<+> layer is formed by performing a glow discharge method, wherein phosphine gas of 0.1-1.0% or thereabout is mixed in silane, on a low resistance amorphous silicon layer using the same device. Then, a patterning is performed, an island-like i-layer 12 to be turned to a channel part is formed, the N<+> layer to be turned to a channel part is removed, and an ohmic layer 14 is formed. Subsequently, aluminum is vapor-deposited, a patterning is performed on a source electrode 15, a drain electrode 16 and a gate electrode 17, and lastly an H2 annealing is performed, thereby enabling to complete the manufacture of the thin film transistor. |
