| 摘要 |
PURPOSE:To obtain a photoreceptor having high dark resistance, high chargeable potential, excellent weather resistance, and capable of forming an image of high density and high resolution, by forming a metal nitride layer and a photoconductive layer composed mainly of amorphous silicon (a-Si) successively on a conductive substrate. CONSTITUTION:A layer 2 composed of a metal, such as Al or Ti, and nitrogen is formed on a conductive substrate 1, and then, an a-Si layer 3 is formed on the layer 2 by the plasma CVD method or the like. The layer 3 is formed to 1- 100mum thickness and the layer 2 is formed to 0.005-100mum thickness. As a result, the obtained electrophotographic receptor is superior to conventional a-Si type receptors in hardness, charging characteristics, and humidity resistance characteristics. Further, a protective layer of 10nm thick Al2O3 may be formed by the electron beam vapor deposition method on the layer 3 in order to enhance hardness, etc. |
