发明名称 |
SINGLE STEP FORMATION OF PN JUNCTION IN SILICON CELL AND COATING THEREON |
摘要 |
The PN juncture in a silicon chip and an oxide coating on its surface are simultaneously formed from clear solution derived from titanium alkoxides, water, alcohol, a suitable acid, and a P or N dopant compound by partial hydrolysis and polymerization. The solution is applied to the surface of a silicon chip. The chip is then heated which converts the solution to a solid oxide coating which meets the antireflective optical film requirements and induces the migration of the dopants into the chip, forming a PN junction in the chip. The method also provides deep and uniform junction formation or diffusion without resulting in excessive carrier concentration. |
申请公布号 |
DE3067142(D1) |
申请公布日期 |
1984.04.26 |
申请号 |
DE19803067142 |
申请日期 |
1980.08.14 |
申请人 |
WESTINGHOUSE ELECTRIC CORPORATION |
发明人 |
YOLDAS, BULENT E.;YOLDAS, LUBOMYRA A. |
分类号 |
C09D5/00;H01L21/225;H01L31/0216;H01L31/04;(IPC1-7):01L31/02;01L21/225 |
主分类号 |
C09D5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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