| 摘要 |
PURPOSE:To evaluate the crystallinity of a semiconductor during manufacture easily by forming one conduction type region, to which an additive of a predetermined kind is added selectively, and a reaction region to which another additive is added selectively in not less than concentration where magnetic resonance absorption is generated. CONSTITUTION:In a three-element circuit 21, N<+> type regions 23, 24 as one conduction type region are shaped into a substrate such as a P-type Si substrates 22, and an insulating layer 25 is formed selectively onto the surface of the substrate 22. Electrodes 28-30 are shaped, coating through-holes 26, 27 for the layer 25. An insulating layer 31 is formed onto the electrodes 28-30, a single crystal semiconductor layer in Si or Ge is shaped onto the insulating layer 31, and a P-type Si growth layer 22a is grown. Likewise, an Si growth layer 22b is shaped. An additive, such as P, AS, etc. capable of measuring magnetic resonance absorption is added to these growth layers 22a, 22b, thus forming reaction layers 35, 36. These additives are added previously to the Si substrate having excellent crystallizability, magnetic resonance absorption is measured beforehand, and the data of the measurement and the magnetic resonance absorption data of the Si growth layer are compared, thus evaluating the crystallinity of the Si growth layer.
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