Fluxless bonding of microelectronic chips.

摘要

Indium is used to bond semiconductor lasers to their heat-sinks without the presence of a corrosive liquid flux. Fluxless bonding is achieved in a vacuum chamber (18) in reducing ambients of CO or H2. Low strain bonds are achieved at bonding temperatures of approximately 180-240 DEG C in CO and 220-230 DEG C in H2. Void-free bonds are achieved in CO at temperatures as low as about 205 DEG C. The technique is applicable to other microelectronic chips such as LEDs, for example.