| 摘要 |
<p>A thyristor having a P<+> emitter region, an N<-> base region, a P base region, and an N<+> emitter region includes an anode and a cathode ohmically connected to the emitter and N<+> emitter regions, respectively. A further P<+> region adjoins the N<+> emitter region and is ohmically connected to the cathode. Metal-Oxide-Semiconductor ("MOS") turn-off structure having a control electrode is included in the thyristor for transporting holes from the P base region to the further P<+> region, and thence to the cathode when the control electrode is biased with a voltage below a threshold value in magnitude (e.g., zero volts). Such biasing creates an impediment to turn-on of the thyristor. When the control electrode is biased with a voltage above a threshold value in magnitude, the MOS structure no longer transports holes from the P base region to the further P<+> region, thereby removing the foregoing impediment to turn-on of the thyristor.</p> |
