| 摘要 |
<p>A floating-gate tunnel-injection type EEPROM having an excellent quality tunneling insulating layer (19) is fabricated by forming an impurity-doped region (28) under the tunneling insulating layer by diffusion from a neighboring region (26, 27).</p><p>The impurity-doped region (28) under the tunneling insulating layer (19) does not have an edge under the tunneling insulating layer. The substrate (13) under the tunneling insulating layer (19) is not damaged by any previous ion implantation process. Thus excellent operation of the EEPROM is enabled.</p> |
