| 摘要 |
PURPOSE:To obtain a wiring with no disconnection at a hole edge by boring a contact hole to an insulating film formed on an Si substrate, attaching a conductor metal on the whole surface while a photo-resist used at that time is left as it is, burying the hole with a metal and removing the metal adhering on the resist together with the resist. CONSTITUTION:A PSG film 2 as the inter-layer insulating film and a photo-resist film 3 are laminated and applied on the Si substrate or a lower layer wiring layer 1, and the contact hole is bored through etching to expose the predetermined region of the layer 1. The whole surface is coated with a conduction metallic layer 4 as the wiring, and the inside of the hole and the upper section of the film 3 are interrupted. The whole surface is coated with a phot-resist film 5 for protecting the metal 4 in the hole while burying the hole, and the metal on the film 3 and the film 5 are removed through etching by using CCl4 gas, etc. Accordingly, only the metal 4 surrounded by the film 2 is left, and a wiring layer 6 as an upper layer being in contact with the metal 4 is formed on the whole surface containing the metal 4. |
