| 摘要 |
PURPOSE:To obtain a structure suitable for high integration, by forming a Schottky gate electrode along a V-shaped groove in the direction of the width of a gate on an active region, thereby effectively reducing the Rs of an MESFET, and obtaining the high etching characteristics having excellent reproducibility and high uniformity by utilizing the anisotropic characteristics of a semiconductor substrate. CONSTITUTION:An active region 2, a source electrode 3, and a drain electrode 4 are formed on a GaAs semiconductor substrate 1. A depletion layer 9 is formed by a surface depletion layer 8 and a gate electrode 5. The increase in Rs due to the decrease in thickness of the active region between the source electrode 3 and the gate electrode 5 is effectively suppressed. Since the shape of the depletion layer 9 is formed along approximately the gate electrode 5, it is expected that the effective length of a channel becomes short in comparison with that which is not formed on a v shaped groove 6. Therefore, the Rs can be reduced, and the effective channel length can be shortened. The Vp of an MESFET is determined by the thickness of the active region directly below the gate electrode and the distribution of impurity concentration. In this constitution, wherein the Vp is directly determined by the shape of the V groove, the highly accurate Vp value is determined by the excellent reproducibility and high uniformity of the anisotropic etching. |
