| 摘要 |
PURPOSE:To form a thin film having good quality on a substrate at a low temp., by disposing the substrate into a vacuum vessel, introducing reactive vapor therein and irradiating radioactive rays thereto. CONSTITUTION:A substrate 7 of silicon, etc. is fixed on a sample base 8 in a sample chamber 1 for depositing thin film which is internally evacuated. Reactive gas is introduced through reactive gas introducing ports 3, 4, 5 into the sample chamber, and radioactive rays are irradiated to the above-mentioned reactive gas through an irradiation window 2, whereby a thin film having no pin-holes is formed at a low temp. on the substrate 7. High-energy radioactive rays such as electron rays, X-rays, ion beams and microwaves are suitable as the above-mentioned radiation and the simultaneous irradiation of a plurality of these rays is also possible. The film forming speed and thin film characteristics are improved if the reactive gas or the substrate 7 is subjected to irradiation of light and heating, or simultaneously to an ultrasonic wave or high-frequency. |
