发明名称 DYNAMIC TYPE SEMICONDUCTOR DEVICE
摘要 PURPOSE:To operate normally a circuit without excessive delay even if a power voltage is changed by connecting a leak bus circuit between a precharge terminal and the ground. CONSTITUTION:Enhancement type MOS TRs 1, 2 constitute a push-pull type dynamic circuit. The leak bus circuit 100 is connected between the terminal OUT and the ground and a precharge signal phip is applied to the gate of an enhancement type MOS TR3. The resistance of a circuit 100 is three times or more as compared to the resistance obtained when the TR1 is turned on. Said constitution makes it possible to change the precharge level in accordance with the variation of the power voltage and operate the circuit normally without excessive delay even if the voltage is temporarily raised especially during the precharge period.
申请公布号 JPS5970022(A) 申请公布日期 1984.04.20
申请号 JP19820181004 申请日期 1982.10.13
申请人 MITSUBISHI DENKI KK 发明人 FUJISHIMA KAZUYASU;SHIMOTORI KAZUHIRO;OZAKI HIDEYUKI;MIYATAKE HIDEJI
分类号 H03K19/003;H03K19/096;(IPC1-7):03K19/096 主分类号 H03K19/003
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