发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce generation of void and obtain better junction by previously setting the area of principal surface of the solder foil to 25% or less of the area of principal surface of element on the occasion of junctioning element to the semiconductor element disposing surface by soldering. CONSTITUTION:A ring-shaped groove 8 is formed on the surface of element disposing surface 2', the nickel plated layer 1 is formed at the entire part including such surface, and a semiconductor element 3 having the nickel plated layer 1 at the lower part is settled by solder 5''. At this time, the area of solder 5'' to be placed in the groove 8 is set to 25% or less of the area of element 3. Thereby, the void is not generated in the solder 5'' and heat radiating characteristic is not lowered and excellent junction can be obtained.
申请公布号 JPS5968935(A) 申请公布日期 1984.04.19
申请号 JP19820178370 申请日期 1982.10.13
申请人 TOSHIBA KK 发明人 KODAN OSAMU
分类号 H01L21/52;H01L21/58;(IPC1-7):01L21/58 主分类号 H01L21/52
代理机构 代理人
主权项
地址