| 摘要 |
PURPOSE:To obtain an amplification gate structural SCR of a high dv/dt strength which has a uniform shunt resistance without damaging an ignition characteristic by a method wherein an oxide film adjusted at a fixed resistance value is inserted between the electrodes of the main and auxiliary SCR parts by CVD method. CONSTITUTION:The main and auxiliary SCR parts 2 and 3 are formed in an Si substrate 1, and an SiO2 film 11 is left by covering the P-N junction between the N-emitter and the P-base of the SCR2. The SiO2 film 12 is provided, between the main and auxiliary electrodes 5 and 6, on the film 11 by low temperature CVD method, the gas which contains a donor impurity is mixed with a reaction gas, and thus the resistance of the film 12 is adjusted at 0.1-10OMEGA. The film 12 operates as a shunt resistor to a displacement current. Besides the ability to reduce the dispersion by adjusting the resistance values for every SCR, the initial ignition length of the emitter layer of the main SCR does not shorten because of the interposition of the insulation film 11, further the ignition junction between the base layer is protected thickly and is not influenced by external atmosphere. This constitution enables to obtain the SCR of high both strengths di/dt and dv/dt. |
