发明名称 |
Thin film deposition by sputtering. |
摘要 |
<p>The deposition of thin films is carried out by a co-sputtering cathode technique particularly suited for deposition of doped thin films on large area substrates. A relatively large planar magnetron sputtering apparatus having a rectangular (picture frame shaped) plasma region is provided to obtain efficient sputtering of the host material. A vacant center area defined by the plasma region is provided for diode sputtering of the dopant. In RF sputtering, co-excitation of the power source is desired to prevent RF mode beating.</p> |
申请公布号 |
EP0105409(A2) |
申请公布日期 |
1984.04.18 |
申请号 |
EP19830109359 |
申请日期 |
1983.09.20 |
申请人 |
GTE PRODUCTS CORPORATION |
发明人 |
HIDLER, HENRY T.;HOPE, LAWRENCE L.;DAVEY, ERNEST A. |
分类号 |
C23C14/36;C23C14/35;H01J37/34;(IPC1-7):01J37/34 |
主分类号 |
C23C14/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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