| 摘要 |
PURPOSE:To clean up a vapor deposition source and to improve the quality of the thin film deposited by evaporation, by applying the negative bias on the vapor deposition source to be used in a vacuum deposition method in plasm contg. hydrogen and performing a melting treatment. CONSTITUTION:Metal 4 to be used as a Vapor deposition source is placd on the heater 6 in a bell-jar 21, and after the inside of the bell-jar 21 is evacuated by an evacuation device 20, valves 8, 9 are opened to introduce H2 or a gaseous mixture of H2 and Ar from a gas supply device 3. A high-frequency voltage of 12-20V at 50-60kHz or <=1kV at 13.56mHz is applied from an electric power source 2 to a discharge electrode 1 to generate plasma of H2 or the gaseous mixture of H2 and Ar. the vapor deposition source 4 is melted by the electric current from an AC power source 11 while the negative bias is applied on a heater 6 for heating the source 4 from a DC power source 5. The scum floating on the surface of the melt is reduced in a short time by the reducing property of H2 and the chemical activity specific to plasma, whereby the melt is cleaned up and the film deposited by evaporation having good quality is formed on the surface of a substrate 7. |
