| 摘要 |
PURPOSE:To attract and fix a wafer stably even in the wafer of low conductivity by previously forming a conductive layer of large conductivity on the attracting surface side of the wafer attracted. CONSTITUTION:Semi-discoid electrodes 1, 2, to the surfaces thereof insulating layers 1a, 2a are formed, are fixed onto a base 4 made of an insulator through through an insulator 5 as a separating section. When the wafer 3 is placed on the electrodes 1, 2 and voltae 10 is applied, the wafer 3 is attracted and fixed to the electrodes 1, 2 by electrostatic force, and flattened. The conductive layer 3b is formed on the attracting surface side of the wafer 3 through evaporation at that time. Accordingly, the wafer can be attracted safely and positively even in the wafer of low conductivity. There is no danger of which an integrated circuit is not broken even when it is one of low dielectric resistance because an electric field is not applied to the wafer. |
