| 摘要 |
PURPOSE:To provide an electrophotographic material which exhibits excellent sensitivity to light in visible and IR regions by providing a specific electric charge blocking layer, electric charge transfer layer, photoconductive layer and surface reforming layer on the substrate of said material. CONSTITUTION:An electrostatic charge blocking layer 2 of 100Angstrom -1mum thickness consisting of nitrogen atom-contg. amorphous hydrogenated and/or fluorinated silicon carbide is formed on a backing substrate 1. An electric charge transfer layer 3 of 2-80mum thickness consisting of amorphous hydrogenated and/or fluroinated silicon is formed on the layer 2. A photoconductive layer 5 of 0.3- 5mum thickness consisting of nitrogen atom-contg. amorphous hydrogenated and/or fluorinated silicon is further formed on the layer 3. A surface reforming layer 4 of 100-5,000Angstrom thickness consisting of amorphous hydrogenated and/or fluorinated silicon carbide is further formed on the layer 5. Since the layer 5 is formed of nitrogen atom-contg. a-Si in the above-mentioned way, said layer exhibits excellent sensitivity to the light in visible and IR regions by controlling the quantity of nitrogen and the intrinsic resistance is controlled as desired with the quantity of nitrogen and the rate of impurity doping. |
