| 摘要 |
PURPOSE:To enable to form a stable connecting pad having high bonding strength without problem such as variation in the surface state due to the unstability of alloy conditions by forming in advance a connecting pad, forming thereafter electrodes for contacting a semiconductor operation region, connecting the electrode to the connecting pad via a wiring layer. CONSTITUTION:A buffer layer 11 is formed on a semi-insulating GaAs substrate 10, and a GaAs operation layer 12 is formed on a mesa formed on the part of the layer. A Ti film 21 and a Pt film 22 are laminated at the prescribed positions on the buffer layer as bonding pads of source, drain and gate, aluminum 23 becoming a gate electrode is formed on the mesa, and the gate electrode is connected to the part of the gate bonding pad formed before on the layer 11. An AuGe film 24 and an Ni film 25 are laminated as source and drain electrodes on the mesa, alloyed, and electrode wirings Ti 26 and Au 27 for connecting the electrodes of the source and drain formed on the mesa to the bonding pads are formed. |
