| 摘要 |
PURPOSE:To improve both photoelectric conversion efficiency and radiation resistance of a solar battery by epitaxially growing a P type GaAs layer of thickness within the specific range on an N type GaAs single crystal substrate to form a GaAs P<+>-N junction structure. CONSTITUTION:A P type GaAs layer 2 having 0.03-0.2mum of thickness is epitaxially grown on an N type GaAs single crystal substrate 1 to form a GaAs P<+>-N junction. For example, when 1MeV electron beam is emitted as total emission amount by 0.7X10<13>, 1.4X10<14> and 7X10<14>cm<-2>, the thickness of the surface layer having the maximum efficiency, i.e., the dependency to the junction depth Xj is designated by curves A-E, and the optimum value of the depth Xj does not depended upon the entire emission amount. Accordingly, the junction depth is limited to the above range, thereby performing the solar battery having 10 or longer of durable life years in high efficiency and space environments. |
