| 摘要 |
PURPOSE:To reduce the irregularity in characteristics of P-N-P and N-P-N transistors by a method wherein the growth of a thermal oxide film is suppressed even in an ordinary oxidized atmosphere by a slicon glass film containing no additive and also an emitter region and a base contact region are formed simultaneously, thereby enabling to form a high density emitter region. CONSTITUTION:After an oxide film 11a has been formed in an N type base region 8 using an ordinary thermal oxidization method, said oxide film 11a is removed by performing a selective etching, and an aperture is provided on the emitter forming region of the N-P-N transistor. Then, P type impurities are vapor-deposited and a vapor-deposition region 13 is formed. Subsequently, after the second insulating film 14 such as a no-additive silicate glass (NSG) film, for example, has been formed on the whole surface, a base contact part is provided, and a vapor-deposition region 15 is formed by vapor-depositing phosphorus. Then, boron and phosphorus are diffused simultaneously from said vapor-deposition regions 13 and 15, and an emitter region 9 and a base contact region 10 are formed. Lastly, an aperture is provided on each contact part of the emitter, base and collector regions, and an electrode is formed. |
