| 摘要 |
PURPOSE:To supress generation of gap to be easily formed between layers, uniformly form an inter-layer insulating film and improve inter-layer insulating strength by depositing a thin polycrystalline silicon film on the entire part of main surface including the first polycrystalline silicon film and by oxidizing it in manufacture of double-layer polycrystalline silicon. CONSTITUTION:A silicon dioxide film 3 and a silicon nitride film 4 are formed, a first polycrystalline silicon film 5 is formed by growth method, a polycrystalline silicon film 13 is deposited by etching and it is oxidized. An inter-layer inslating film 14 and a silicon dioxide film 15 are formed uniformly by the growth method. Thereby, abnormality at the end part can be improved drastically. Moreover, growth of grain of polycrystalline silicon film 5 and generation of protrusion can also be reduced considerably. The silicon dioxide film 15, a silicon nitride film 4 and a silicon dioxide film 3 are removed by the etching, a second gate oxide film 7, a second polycrystalline silicon film 8 are formed by growth method, and a pattern is also formed. Shape of the overlapping region of the first and second polycrystalline silicon films 5, 8 are improved and an interlayer insulating film 14 is formed uniformly. |
