VACUUM DEPOSITING COMPOUND SEMI CONDUCTORS IN ACTIVATED HYDROGEN

摘要

In the case of forming a single-layered or multilayered compound semiconductor film such as a GaAs thin film for a semiconductor laser, an EL light-emission element and the like in a molecular beam epitaxis method, a vacuum deposition method or a sputtering method, the method of the invention is to prevent the compounds from deteriorating and decomposing by making activated hydrogen coexist therein.