| 摘要 |
PURPOSE:To shorten substantial channel length Leff, and to enable to obtain a high gain constant beta at an MOSFET by a method wherein impurities are introduced partially to the channel part of the MOSFET using a converging ion beam. CONSTITUTION:Diborane (B2H6) gas is supplied to a chip 38 in a converging ion beam generator, and the prescribed position on the sample 38 is scanned by the ion beam 35 of B<+>, BH<+>, BH<+>2. After B ions are implanted to the parts of the substrate 1 removed with a silicon nitride film 11, channel stopper layers 13 are formed. The silicon nitride film 11 and an oxide film 10 are removed, a gate oxide film 2 is grown, the channel doped layer 14 is formed, B ions are converged according to converging ion beam technique to be implanted to the central part of a gate 3, and a P-type layer 8 is formed. After regions of a source 4, a drain 5 are formed, by formation of an interlayer insulating film 15, opening of contact holes, and formation of aluminum electrodes 7, the MOSFET is completed. |
