| 摘要 |
PURPOSE:To enable to send signals of ON, OFF by one system without providing a different circuit for isolation at the titled device by a method wherein a gate electrode extending over a P type impurity region and an N type impurity region is formed on the surface layer side of an N type Si substrate having a P type impurity back layer, a cathode is formed extending over the N type impurity region and a second P type impurity region, and an anode is formed on the back layer. CONSTITUTION:When a positive voltage is applied to the gate 2 in the condition that a positive voltage is applied to the anode 4, a transistor T3 is made to the ON condition, a transistor T4 is made to the OFF condition, a current flows in the order of the regions P1 N1 (P2) N2, and because a saturated current flows to transistors T1, T2 constructing a positive feedback loop, the current continues to flow through the tansistors T1, T3 even when the gate voltage is reduced to zero, and the transistor T3 is made to the OFF condition. When negative electric charge is applied to the gate 2, the transistor T4 is made to the ON condition, a part of the current flows as P2 (N2) P3, the transistors T1, T2 can not be held in the saturated condition together, and the circuit between the anode 4 and the cathode 3 is made to the OFF condition. |
