| 摘要 |
PURPOSE:To prevent contacts from generation of a short between adjoining structural elements at a semiconductor element by a method wherein the structural elements are covered with an insulator to act as a buffer against an etching liquid during contact holes are etched. CONSTITUTION:Etching of the contact holes 213, 214 is performed by making buffer hydrofluoric acid to act to an oxide layer 212. Because the deposited oxide layer 212 is etched far rapidly than a thermal oxide layer 27, the contact holes 213, 214 can be extended crossing the boundary of a poly-silicon part to be contacted without generating a short to the adjoining structural elements. The thermal oxide layer 27 functions as the etching barrier of the process to form the contact holes, and insulates the structural elements of a drain, a source, etc., as not to come in contact with a metal layer 215. |
