| 摘要 |
PURPOSE:To improve a radiation effect, and to reduce the thermal strain of a semiconductor element due to a thermal change by forming a lead frame by a copper group member, setting up a metallic plate consisting of an iron group member on at least element loading side of a die stage for the lead frame and fixing the semiconductor element on the metallic plate. CONSTITUTION:The metallic chip 3 consisting of the iron group member such as a 42 alloy is fixed to the die stage 2 of the lead frame 1 formed by the copper group member of high thermal conductivity such as beryllium bronze through spot welding, etc. The semiconductor element 4 is mounted on the chip 3. Terminals for connecting signal lines fitted to the semiconductor element 4 and lead terminals 5 are bonded and connected by wires 6 formed by aluminum or gold and a large number of them are molded and formed at a time with a resin such as epoxy, and the whole is cut and shaped to form the semiconductor device. Heat generated from the semiconductor element 4 is radiated from the die stage 2 consisting of the copper group member such as beryllium bronze of high thermal conductivity through the metallic chip 3. The silicon substrate is not subject to thermal strain because the silicon substrate and a foundation blank forming the semiconductor element 4 have thermal expansion coefficients in approximately the same extent, and the substrate is kept at approximately a fixed temperature by a radiation effect. |
