发明名称 |
Device for making a pressure connection to a thyristor semiconductor wafer |
摘要 |
Pressure-connection device for a thyristor semiconductor wafer (1) which is clamped in the housing and has a central gate contact (13), an annular auxiliary emitter contact (16) surrounding the latter and a main emitter contact (12) which surrounds the latter and the gate contact. The device consists of a connecting disc (3) adjacent to the main emitter contact and having a continuous, central circular hole (3') in which a cylindrical ceramic bush (41) which projects at the top is mounted so as to slide for the pressure connection of the gate contact. Connection is made by a circular connection blank (45) insulated by the connecting disc using a cup spring (43) inserted in the cavity (42) of the bush. The connection blank is connected to a gate connection lead (44) which is fed radially through a slit (5) in the bush and connecting disc (3) in an insulated manner. Provided at the end face of the cylindrical bush facing the semiconductor wafer is a connecting ring (46) which is adjacent to the auxiliary emitter contact and which is connected to a connecting lead (48). The latter is fed radially through the connecting disc together with the gate connecting lead. The opposite end face of the bush has a circumferential step (St) on which further cup springs (47) are mounted so as to rest against the housing. <IMAGE>
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申请公布号 |
DE3236609(A1) |
申请公布日期 |
1984.04.05 |
申请号 |
DE19823236609 |
申请日期 |
1982.10.02 |
申请人 |
LICENTIA PATENT-VERWALTUNGS-GMBH |
发明人 |
GERSTENKOEPER,HEINRICH;JUCHMANN,HEINZ |
分类号 |
H01L23/051;H01L23/48;(IPC1-7):01L23/48 |
主分类号 |
H01L23/051 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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