| 摘要 |
PURPOSE:To obtain a thin-film, which is excellent in crystallinity and is suitable for an EL, etc., by depositing ZnSe on a substrate without being substantially accompanied by decomposition in an ionized or activated hydrogen atmosphere. CONSTITUTION:ZnSe or its constituent is flown toward the substrate without being accompanied by decomposition (1% or less even when it is decomposed) by a proper means under the state in which ionized or activated H2 gas is entered in a deposition tank. A gas containing noxious impurities, such as O2, C, N2, etc. in the flying space of a thin-film forming material reacts with activated H, is brought to an innoxious state and is discharged, and is removed in an extent that there is no trouble practically. Consequently, the mixing of noxious components into the ZnSe thin-film is prevented, and an ideal ZnSe crystal is obtained. When Mn, TbF3, etc. are co-evaporated at the same time, the ZnSe thin-film of brightness distribution having an acute peak is obtained, and the thin-film is suitable for the mother material for an EL element, etc. |
