| 摘要 |
PURPOSE:To enhance crystallinity, to suppress segregation of impurities and to enhance light generation efficiency of a semiconductor light emitting device by a method wherein a P type layer and an N type layer of low concentration respectively are laminated and inserted between P-N junction constructing the semiconductor light emitting device. CONSTITUTION:A P type GaAlAs layer 2 made to impurity concentration of 1-2X10<18>/cm<3> by doping with Zn is grown liquid phase epitaxially on a P type GaAs substrate 1 made to impurity concentration of 1-2X10<19>/cm<3> by doping with Zn, Zn is doped thereon to make concentration to 5-10X10<16>/cm<3>, and moreover the P type GaAlAs layer 21 made thickness to 0.5-1.0mum is grown, which thickness is within diffusion length of holes. Then the N type GaAlAs layer 31 having concentration of 1-5X10<16>/cm<3> and made thickness to 0.3- 0.5mum is grown thereon, which thickness is within diffusion length of electrons, and an N type GaAlAs layer 3 having concentration of 5-10X10<17>/cm<3> is deposited thereon. Accordingly the flow impurity concentration layers 21, 31 are interposed between the layers 2, 3 to suppress the segregation of impurities, and the electrodes 4, 5 of the N side and the P side are fixed to both sides of the surface and the back. |
