发明名称 |
Semiconductor laser. |
摘要 |
<p>A window V-channeled substrate inner stripe semiconductor laser includes window regions formed at both ends of a stimulated region. The stimulated region includes a crescent active layer, and each of the window regions includes a plane active layer for transferring the laser beam emitted from the stimulated region to the mirror. An optical guide layer is formed on said crescent and plane active layers in order to ensure a stable operation of the window structure semiconductor laser.</p> |
申请公布号 |
EP0104712(A2) |
申请公布日期 |
1984.04.04 |
申请号 |
EP19830302278 |
申请日期 |
1983.04.21 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
HAYAKAWA, TOSHIRO;MIYAUCHI, NOBUYUKI;SUYAMA, TAKAHIRO;YANO, SEIKI |
分类号 |
H01S5/00;H01S5/16;H01S5/223;H01S5/323;(IPC1-7):01S3/19;01S3/05 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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