| 摘要 |
PURPOSE:To reduce the irregularity of the result of processing, and to improve productivity and reliability even when an IC is microminiaturized and a tendency of the increase of the diameter of a wafer progresses by regulating a gas flow in a chamber and diffusing a gas toward a material to be processed with uniform density. CONSTITUTION:A diffusing plate 27, a radius thereof is smaller than a discoid flow regulating plate 26 and which takes the same discoid shape as the plate 26, is fixed to the lower section of the flow regulating plate 26, at the center thereof a small hole 29 is formed, by using a screw 28 while the center of the diffusing member is made the same as that of the plate 26. Regarding the values of the diameter (a) of the small hole 29 of the flow regulating plate 26, the diameter (b) of the diffusing plate 27 and a space (h) between the flow regulating plate 26 and the diffusing plate 27, an effect is displayed when (a) is selected in 12.5-15mm., (b) in 60- 100mm. and (h) in 1.5-3mm. on the five inch wafer of the material to be processed 23. The gas injected from a gas introducing pipe 24 passes through the small hole 29 formed at the center of the flow regulating plate 26, and diffuses to the upper section of the wafer 23 from the peripheral section of the diffusing plate 27. Accordingly, the gas injected toward the horizontal direction in the chamber 21 is diffused uniformly to the lower section of the chamber and to the upper surface of the wafer, and changed into plasma by microwaves. |
