SILICON AVALANCHE PHOTODIODE WITH LOW K.SUB.E.SUB.F.SUB.F AND A METHOD OF MAKING SAME

摘要

-11- RCA 76,602 SILICON AVALANCHE PHOTODIODE WITH LOW keff AND A METHOD OF MAKING SAME An n-p-.pi.-p+Si avalanche photodiode wherein the number of acceptors introduced into a Si body to form the p-type conductivity region has been reduced and this region extends a distance greater than about 35 micrometers into the body from the surface and wherein the n-type conductivity region extends a distance into the body such that the p-n junction is less than about 10 micrometers from the surface of the body. The method of the invention comprises introducing a reduced number of acceptors into the surface of the body, diffusing the acceptors into the body a distance greater than about 35 micrometers and forming an n-type conductivity region such that the p-n junction is less than 10 micrometers from the surface of the device. APDs of the invention exhibit a keff of about 0.006 which is a factor of greater than 2.5 about less than that of typical prior art devices.