| 摘要 |
PURPOSE:To form a pattern together with a gate electrode at the same time by a method wherein a source molybdenum layer and a drain molybdenum layer are provided on a gate oxide film besides a gate molybdenum layer, and the shape of a contact hole is determined by utilizing these both layers. CONSTITUTION:The gate oxide film and a field oxide film 3 are formed on a P type Si substrate 1, and the molybdenum layer is vapor-deposited thereon. The gate electrode 6 of a MOSFET, the source molybdenum layer 7 and the drain molybdenum layer 8 of the contact hole shape are formed on that molybdenum layer. Next, etching is performed by providing holes 13 after forming an Si oxide film 11. Thereafter, implanted layers 9 and 9' are provided by introducing N type ions with a PSG film as the mask, and accordingly the source-drain regions are formed. Finally, the contact holes 14 corresponding to the source-drain regions are formed by etching with the PSG film 10 as the mask. |
