| 摘要 |
<p>Process comprises reaction of mixts. of chlorosilanes, silanes HCl and H2. The chlorosilanes used are dichlorosilane as a gaseous source and trichlorosilane and silicon tetrachloride as liq. sources. - The reaction temp. is 600-1200 deg.C, the invidiual optimum temp. being governed by the required type of crystallisation, the growth rate of the deposited Si and economic factors.</p> |
