| 摘要 |
PURPOSE:To obtain a semiconductor which has less leakage current by forming an oxidized tantalum film which has less density than a silicon dioxide layer on a silicon substrate and forming a capacitor which has a tantalum oxide film dielectric. CONSTITUTION:A tantalum Ta 5 is covered on a silicon substrate 4, on which a field SiO2 film 3 is formed, and with a photoresist film 6 thereon as a mask the excess Ta film is removed by etching. After the film 6 is then removed, it is heated in dry oxygen stream to oxidize the film 5, thereby forming a Ta2O5 film 5'. As the vacuum is increased higher in the step of depositing the tantalum, the crystallinity of the Ta is improved, and the density of the Ta2O5 film after oxidation can be enhanced. The Ta2O5 film which is increased in the density according to this method can reduced its leakage current, and a highly integrated LSI can be enhanced in quality and performance. |
