| 摘要 |
PURPOSE:To improve the characteristics of an amorphous silicon solar battery by interposing a thin one conductive type amorphous silicon layer having low density between one conductive type layer and a true layer. CONSTITUTION:Since an N type a-SiC film causes a distortion in the boundary between both films when the film is grown directly on an i type a-Si film due to the distortion occurred due to the content of a thickness of common bond radius smaller than Si such as a phosphorus or carbon, a misfitting defect tends to take place. In order to avoid this defect, an N type a-Si film 4 of extremely reduced thickness like 10-50Angstrom is inserted between the i-type a-Si film 3 and the N type a-SiC film 5, thereby alleviating the distortion produced between both boundary surface to prevent the characteristics from decreasing. In this case, when the thickness of the n type a-Si film 4 is increased equal to or larger than 50Angstrom , the light which is incident from the direction of an arrow 8 is absorbed at this region to reduce the quantity of light which reaches the layer 3, thereby decreasing the generated current. When the N type impurity density in the N type a-Si film 4 becomes equal to or higher than 10<20>atoms/cc, the band gap of the film 4 decreases, thereby causing the structural defect to increase. |
